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Laser |
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ArF excimer laser (Lambda Physik LPX 300) with 600 mJ/pulse at 193 nm. |
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KrF excimer laser (Lambda Physik LPX 300) with 800 mJ/pulse at 248 nm. |
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KrF excimer laser (Lambda Physik LPX 100) with 400 mJ/pulse at 248 nm. |
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XeCl excimer laser (Lambda Physik COMPex) with 400 mJ/pulse at 308 nm. |
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Nd:YAG laser (Quantel Brilliant B) with 850 mJ/pulse at 1064 nm, 400 mJ/pulse at 532 nm, 160 mJ/pulse at 355 nm and 90 mJ/pulse at 266 nm. |
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Ar+ laser (Coherent Innova 300C FreD), multi line, including UV (doubling of 488 nm) with 0.1 W at 244 nm. |
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Ti:Sapphire (Coherent 899 Ring Laser for Raman), 680-1100 nm (line widths < 2 GHz) |
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CO2 laser, tunable, CW or pulsed (40 W). |
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Excimer lamps (setup) |
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Xe2* at 172 nm |
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KrCl* at 222 nm |
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XeCl* at 308 nm |
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Reactive Ion Etching (RIE, Alcatel GIR 3000) |
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Processes possible with up to 8 different corrosive or non-corrosive gases (see chamber with Ar plasma). |
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Sample size up to 6 inches (15.3 cm) diameter. |
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600 W rf power at 13.56 MHz. |
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Butterfly-valve-controlled pressure range from 5 to 100 mTorr (6.5 * 10-3 to 1.3 * 10-1 mbar). |
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Added ICP generator to increase plasma density. |
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Thin Film Deposition |
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1. |
High vacuum (HV) chamber for pulsed laser deposition with a variety of options |
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One cylindrical target |
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Synchronized reactive gas pulse (University Zurich designed and built) |
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Quartz micro balance |
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Plasma beam (designed and built at the National Institute for Lasers, Plasma and Radiation Physics, NILPRP, Romania) |
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Ion (Langmuir) probe |
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Infrared camera |
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2. |
Ultra high vacuum (UHV) chamber for pulsed laser deposition with a variety of options |
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5 computer controlled cylindrical targets (PSI designed and built) |
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Optional: 1 computer controlled pellet target (PSI designed and built) for RT and 77K |
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Computer controlled substrate manipulator with x,y,z and 2 rotational movements for temperatures from 120 K to 1100 K (desigend and build by Prevac) |
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Substrate holder for heating and cooling applicable for pulsed laser deposition (desigend and build by Prevac) for T up to 1100 K and pressure up to 1 bar (oxygen) |
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Quartz micro balance (mechanical design from Prevac, Oscillator, PLO-10i from BeamTec-MaxTec) |
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Synchronized reactive gas pulse (University Zurich designed and built) |
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Plasma beam (designed and built at the National Institute for Lasers, Plasma and Radiation Physics, (NILPRP), Romania and modfied for UHV at PSI) |
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Ion-probe (distance and angle resolved) (PSI designed and built, probe built at Risoe National Institute, Denmark) |
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Meta-stable detector (distance and angle resolved) (PSI designed and built) |
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Plasma mass spectrometer (energy, distance and angle resolved)(EQP-from Hiden) also utilized for SIMS |
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Ion gun for in-situ SIMS analysis (IG 20 from Hiden) |
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Load-lock system with battery pumped transfer vessel (from Prevac) |
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3. |
Vacuum chamber for laser induced forward transfer with a variety of options |
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Computer controlled substrate manipulator (x,y) |
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Vacuum to ambient pressure for various gases |
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Optical access perpendicular and along the laser axis. |
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4. |
MO-CVD (metal-organic chemical vapor deposition, under construction, PSI) |
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Sample preparation |
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Diamond wire saw (Logitech Model 15) |
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Precision polishing/lapping (Unipol 801, MTI Corporation) |
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Spin coater with dispenser (SCS P6708) |
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Draw blade applicator for film master blading |
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High speed mixing (Ika, Ultra-Turrax T25) |
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Analysis |
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1. |
Techniques for analysis after irradiation |
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Profilometer (Veeco, Dektak 8) for measurements of surface profiles and roughness. |
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Scanning electron and standard optical (video) microscopies |
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Raman-microscopy (imaging, Jobin Yvon): with a highest spatial resolution of 1 micron3. Sample heating up to 1200 K under inert gas is also possible. |
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High resolution Raman spectroscopy: possible for different laser lines (Ar+ laser + RingLaser, see above) and measurements close to the Raleigh line ~ 5-10 cm-1) and temperatures from 4 K to 300 K. |
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X-ray diffraction (XRD, Siemens D500) for standard theta-2theta and small angle. |
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Laser-ablation induced emission (breakdown) spectroscopy (or LIBS) for plasma analysis of the samples (including trace analysis). |
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Dynamic and static SIMS (Hiden EQS) with argon and oxygen ions. Best lateral resolution 100 microns; depth profiling and compositional analysis. |
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Quartz micro balances for measurement of ablation or deposition rates. |
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UV/Vis/near-IR Spectrometer (Varian Cary 500) to measure diffuse reflectance (Labsphere, DRA-CA-50) and transmission |
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Hall measurement system (Ecopia HMS 3000) at RT and 77 K with 0.5 Tesla. |
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2. |
Time-resolved (ns to ms) analytical techniques |
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Gated-ICCD with monochromator for emission spectroscopy (time and space resolved) of products after laser irradiation |
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Shadowgraphy for dynamic observation of the gas phase above the sample after laser irradiation |
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Surface interferometry for dynamic changes of the sample surface morphology after laser irradiation |
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Ion probes (Langmuir probes) for plasma analysis (time, space and angle resolved) |
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Time-, space-, angle-, and energy resolved plasma mass spectrometry |
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3. |
Other analytical techniques available in our group and the General Energy Research Department |
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DRIFT, FT-Raman, quadrupole mass spectrometry, Auger-spectroscopy, X-ray photoelectron spectroscopy (XPS), contact angle, differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), atomic force microscopy (AFM), spectroscopic ellipsometry, and many other techniques available in a large research institute. |
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